基于0.13μm工艺的低电压CMOS场效应管输出电导

Output conductance of 0.13μm MOSFET

对采用0.13μm工艺(p13)低电压工作条件下的CMOS模拟集成电路设计中场效应管的模型参数输出电导gd进行了研究,给出了设计公式。根据所研究的结果设计了一个两级运算放大器电路并进行了仿真。仿真结果与设计结果吻合得很好,证明了设计公式的有效性。

The output,gd,of MOSFET in CMOS 0.13 μm technology and working in very low voltage was investigated,and design formulas were given.Based on the investigation results,a two-stage op-amp was designed and simulation was carried out.Simulation results are in good agreement with designing results,which validate the design formulas.