摘要
采用改进型坩埚下降法,从富Bi的高温熔体中生长了硅酸铋(Bi4Si3O12,BSO)晶体,研究了BSO晶体的析晶行为。透明晶体最大尺寸达到30mm×30mm×35mm,晶体具有良好的光学均匀性,在350～900nm波段透过率保持在约80%。相对锗酸铋(Bi4Ge3O12,BGO)晶体,BSO闪烁晶体具有快的衰减时间,有望用于能量范围在几百MeV的4π电磁量能器。
A bismuth silicate(Bi4Si3O12,BSO) crystal with a rectangular shape and dimensions of 30 mm in width and 35 mm in height was grown by the modified Bridgman technique from Bi2O3-rich melt.The crystallization behavior of the BSO crystal was investigated.The BSO crystal has good optical uniformity and a high transmittance of about 80% in the range of 350 to 900 nm.BSO crystal has potential for application in 4π electromagnetic calorimeters in the energy region of several hundred MeV because its decay time is fa...
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2009年第2期295-298,共4页
Journal of The Chinese Ceramic Society
基金
上海市科委重点项目(0852051300)
上海市教委重点项目(09ZZ196)资助
关键词
硅酸铋晶体
坩埚下降法
晶体生长
闪烁体
bismuth silicate crystal
Bridgman technique
crystal growth
scintillator
