Ta衬底B掺杂金刚石薄膜电极极化特性

Electrochemical behavior of boron-doped diamond thin-film electrodes grown on tantalum

研究了热丝化学气相沉积(HFCVD)方法在Ta衬底上制备B掺杂金刚石(BDD/Ta)薄膜电极的极化特性。扫描电镜(SEM)和Raman光谱显示,BDD/Ta薄膜电极具有较好的成膜质量。电化学测试表明,BDD/Ta薄膜电极具有比常规电极如Pt、IrO2和RuO2更宽的电势窗口,在Na2SO4溶液中的电势窗口为4.1V(-1.8V～+2.3V vs SCE),电势窗口受沉积C源浓度和支持电解液PH值的影响。BDD/Ta薄膜电极在[Fe(CN)6]3-/4-体系中电化学反应具有良好的准可逆性,其动力学主要是受扩散过程所控制。紫外-可见吸收光谱显示,BDD/Ta薄膜电极能够有效阳极电催化降解苯酚,降解过程中化学需氧量(COD)去除率达98.6%。

The electrochemical behaviors of the boron-doped diamond film electrode grown on tantalum substrate (BDD/Ta) prepared by chemical vapor deposition technique are studied.Raman spectroscopy and scanning electron microscopy (SEM) examinations demonstrate that the films have well-defined diamond features.The window potential of BDD/Ta in 0.5 M Na2SO4 solution is 4.1 V:the hydrogen and oxygen evolution potentials are -1.8 V and +2.3 V respectively,which are much wider than those of traditional electrodes such as...