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一种新颖全差分光电集成接收机的标准CMOS实现 被引量：4

Standard CMOS implementation of a novel,fully differential optoelectronic integrated receiver
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摘要 提出一种新颖的全差分光电集成接收机,它包含了全差分光电探测器和相应的差分接收电路,其中全差分光电探测器的作用是实现入射光信号到全差分光生电流信号的转换。采用特许3.3V、0.35μm标准CMOS工艺,实现了一种相应的宽带、高灵敏度全差分光电集成接收机。测试结果表明:对于850nm的入射光,集成全差分光电探测器的差分跨阻前置放大器(TIA)的工作速率可达到500Mbit/s,而整个光接收机的带宽则达到了1.0985GHz;在10-12的误码率条件下,灵敏度可达到-12.3dBm。 To eliminate the limitations of a conventional differential optical receiver,a novel fully differential optoelectronic integrated receiver is proposed,including a new-type fully differential photodetector and a corresponding differential receiving circuit,where the fully differential photodetector converts the incident light into a pair of fully differential photo-currents.And a corresponding wide-bandwidth,high-sensitivity,fully differential optoelectronic integrated receiver is also implemented in a chart...
作者 余长亮 毛陆虹 肖新东
机构地区 天津大学电子信息工程学院
出处 《光电子．激光》 EI CAS CSCD 北大核心 2009年第4期432-435,共4页 Journal of Optoelectronics·Laser
基金 国家自然科学基金资助项目(60536030 60676038)
关键词 标准CMOS 全差分 光电集成 光接收机 standard CMOS fully differential optoelectronic integration optical receiver
分类号 TN851 [电子电信—信息与通信工程]
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参考文献9

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同被引文献43

  • 1陆尧,姚素英,徐江涛.基于自适应曝光的CMOS图像传感器的设计与实现[J].光电子．激光,2006,17(11):1321-1325. 被引量：8
  • 2Behzad Razavi. Prospects of CMOS technology for high-speed optical communication circuits[J]. IEEE Journal of Solid-state Circuits, 2002,37(9) : 1135-1145.
  • 3Henrickson L, Shen D, Nellore U, et al. Low-power fully integrated 10-Gb/s SONET/SDH transceiver in 0. 13 μm CMOS[J].IEEE Journal of Solid-State Circuits, 2003,38 (10) : 1595- 1601.
  • 4Woodward T K, Krishnamoorthy A V. 1 Gb/s integrated optical detectors and receivers in commercial CMOS technologies[J].IEEE Journal of Selected Topics in Quantum Electronics,1999, 5(2) :146-156.
  • 5Carolien Hermans, Paul Leroux, Michiel Steyaert. Gigabit photodiodes in standard digital nanometer CMOS technologies[A]. 33rd Conference on European Solid-State Device Research[C]. 2003,51-54.
  • 6Cathleen Rooman, Daniel Coppee and Maarten Kuijk. Asynchronous 250-Mb/s optical receivers with Integrated detector in standard CMOS technology for optocoupler applications[J]. IEEE Journal of Solid-State Circuits,2000,35(7) :953-954.
  • 7MAO Lu-hong, CHEN Hong-da, WU Rong-han, et al. Simulation and design of a CMOS process compatible high-speed Si-photodetector[J].2002,23(2) : 193-197.
  • 8Zimmermann H. Integrated high-speed, high-sensitivity photodiodes and optoelectronic integrated circuits [J].Sensors and Materials,200], 13(4) : 189-195.
  • 9Sung Min Park, Hoi-Jun Yoo. 1.25 Gb/s regulated cascade CMOS transimpedance amplifier for gigabit ethernet applications[J]. IEEE Journal of Solid-State Circuits, 2004,39 ( 1 ) : 112-121.
  • 10Belini V L, Romero M A. Design of active inductors using CMOS technology[J].IEEE Proceedings of the 15th Symposium on Integrated Circuits and Systems Design[C]. 2002,296- 301.

引证文献4

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光电子．激光
2009年 第4期

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