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氧化镁-碳化硅复相陶瓷在X波段的衰减性能 被引量:4

PERFORMANCE OF MAGNESIUM OXIDE-SILICON CARBIDE COMPOSITES WITH MICROWAVE ATTENUATION CHARACTERISTICS IN THE X WAVE BAND
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摘要 以MgO为基体,添加少量SiC,采用热压工艺制备复相微波衰减钮扣材料,通过矢量网络分析仪测试其X波段的微波衰减性能。研究SiC的添加量、烧结温度、保温时间以及介电性能等因素对复相材料衰减性能的影响。结果表明:当SiC质量分数(下同)从1%到10%逐渐增加时,复相材料的损耗谐振衰减频率(f0)随之降低,衰减量也逐渐减小,有效衰减带宽增大;这种现象在SiC含量小于2%时更显著。烧结温度的降低会提高复相材料的f0;保温时间对复相材料衰减性能稳定性的影响较小。从谐振腔及波导的性质入手分析了影响f0的主要因素,导出了给定钮扣半径下复相材料f0与相对介电常数之间的关系及适用范围,并据此从材料设计的角度对耦合腔行波管"损耗钮扣"的制备进行了探讨。 The MgO based lossy buttons with the addition of SiC were manufactured by a hot-pressing method and the microwave attenuation characteristics in the X wave band(8-12 GHz) were tested using a network analyzer.The effects of the content of SiC,sintering temperature,holding time,and dielectric properties on the microwave characteristics were investigated.The results show that when the content of SiC is in the range from 1%(mass fraction,the same below) to 10%,the attenuation frequency of lossy resonance(f0) sh...
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2009年第3期397-402,共6页 Journal of The Chinese Ceramic Society
基金 国防科工委基金资助项目
关键词 损耗钮扣 微波衰减 边带震荡 热压 衰减频率 波导 lossy button microwave attenuation sideband oscillation hot pressing attenuation frequency wave guide
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