摘要
研究了Ti-B位置换改性Mg2SiO4陶瓷微结构和微波介电性能。结果表明:在合成Mg2SiO4陶瓷过程中,Mg2SiO3总是作为第二相出现,Ti的引入能够有效地抑制Mg2SiO3的出现;但是,Ti不是进入Si—O四面体取代置换Si形成Mg2(Si1-xTix)O4固溶体,而是Mg与反应形成Mg2TiO4、Mg2Ti2O5等第二相。随着x值增加,Mg2(Si1-xTix)O4陶瓷的相对介电常数(εr)从6.8增加到8.1,机械品质因数与频率乘积(Q×f)也获得显著改善,但谐振频率温度系数(τf)不会因Ti引入而得到优化。在x=0.1时,Mg2(Si0.9Ti0.1)O4陶瓷获得最优的微波介电性能:εr=7.4,Q×f=73760GHz,τf=-6×10-6/℃。
The microstructure and microwave dielectric characteristics of Mg2SiO4 ceramics modified with Ti-substitution for B-site were investigated.The results show that MgSiO3 is usually observed as the second phase during the process of synthesizing Mg2SiO4 ceramics.The introduction of Ti could suppress MgSiO3 effectively and took the place of Si by invading the Si—O tetrahedron to form Mg2(Si1-xTix)O4 solid solution;However,it forms a second phase by reaction with Mg,such as Mg2TiO4 or Mg2Ti2O5.The rela-tive diel...
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2009年第3期359-362,共4页
Journal of The Chinese Ceramic Society
关键词
介质陶瓷
微波介电性能
介质谐振器
硅酸镁陶瓷
dielectric ceramics
microwave dielectric characteristics
dielectric resonators
magnesium sulphate ceramics
