CMOS有源集成像素传感器检测高能物理粒子

CMOS active pixel sensors for high energy particle tracking

研究适用于下一代国际线性电子对撞机中顶点探测器的CMOS有源集成像素传感器.实验芯片现采用标准0.35μmCMOS工艺设计,像素矩阵为128行×32列,像素大小为25μm×25μm,在像素内部实现相关双次采样技术.通过采用放射源55Fe测定,芯片等效输入随机噪声为12个电子,而固定噪声为3个电子.传感器的电荷-电压转换系数达59μV/e-.在170MHz工作主频下,芯片信号处理速度达12μs/帧.芯片模拟部分功耗小于30mW.

The future international linear collider(ILC)requires a vertex detector with higher spatial resolution and faster readout speed.As a potential equipment,monolithic active pixel sensor(MAPS)based on standard CMOS technology is discussed.A 128×32 pixels prototype was developed on a standard CMOS 0.35 μm process.The pitch of pixel is 25×25 μm2.Correlated double sampling(CDS)and signal amplification have been realized inside pixel.The prototype was calibrated by using a 55Fe X-ray source.For temporal noise,the ...