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10Gb/s×12通道VCSEL驱动器阵列设计 被引量:1

Design of 10Gb/s×12 channel VCSEL driver array
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摘要 采用0.18μm CMOS工艺设计了12通道并行垂直腔面发射激光器(VCSEL:Vertical Cavity Surface Emitting Laser)驱动阵列。仿真结果表明,1.8V电源供电时,该电路单通道输出调制电流可达30mA,工作速率为10Gb/s,最大可达12Gb/s,12路并行通道的总带宽为120Gb/s,该驱动阵列电路可用于高速芯片间光互连。 A 12-channel Vertical Cavity Surface Emitting Laser (VCSEL) driver array has been designed in a 0.18μm CMOS technology. Under a supply voltage of 1.8 V, simulated results show that a single channel has a speed of 10Gb/s (12Gb/s max) and a total capacity of 120 Gb/s can be obtained from 12 channels. The VC-SEL driver can be used in optical inter-connections between high speed chips.
出处 《光通信技术》 CSCD 北大核心 2009年第2期51-54,共4页 Optical Communication Technology
基金 国家863计划项目(2007AA01Z2A5)资助。
关键词 垂直腔面发射激光器 驱动器 12通道 光互连 VCSEL driver 12 channels optical interconnection
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  • 1[1]B Madhavan,A F J.Levi:Low-power 2.5Gb/s VCSEL driver in 0.5μm CMOS technology [J].Electronics Letters,1998,34(2):178-179.
  • 2[2]Fouad E Kiamilev,Ashok V.Krishnamoorthy:A high-speed 32-channel CMOS VCSEL driver with built-in self-test and clock generation circuitry [J].IEEE Journal of Selected Topics in Quantum Electronics,March/April,1999,5(2):287-295.
  • 3[3]Zhi-Gong Wang.Manfred Berroth,Ulrich Nowotny,Manfred Ludwig,Peter Hofmann,Axel Hulsrnann,Klaus Kohler,Brian Raynor,Joachim Schneider:Intergrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3-um gate length quantum-well HEMT's [J].IEEE Journal of Solid-State Circuits,1993,28(7):829-834.
  • 4[4]Xin-hua CHEN,Ting HUANG,Xi-ming KE,Ting-ting XIE,Hai-tao CHEN,Zhi-gong WANG,Yi DONG,Shi-zhong XIE.2.5-Gb/s 0.35-μm CMOS laser-diode driver [A].4th International Conference On ASIC Proceedings[C].Shanghai,China,2001.
  • 5Razavi B. Design of analog CMOS integrated circuits [M]. New York: McGraw-Hill International Edition, 2000.100-134.
  • 6MAXIM. 10.7Gbps laser diode drivers evaluation kit [EB/OL]. http://pdfserv.maxim-ic.com/en/ds/MAX3930-MAX3932.pdf. 2002-08-30/2004-10-24.
  • 7Wang Z G, Berroth M, Nowotny U, et al. 15Gbit/s integrated laser diode driver using 0.3μm gate length quantum well transistors[J]. IEE Electronics Letters, 1992, 28(3): 222-223.
  • 8Banu M. 10Gbit/s bipolar laser driver [J]. Electronics Letters, 1991, 27(3):278-280.
  • 9Rein H-M. Multi-gigabit-per-second silicon bipolar IC's for future optical-fiber transmission systems [J]. IEEE Journal of Solid-State Circuits, 1988, 23(3): 664-675.
  • 10Petersen A K. Front-end CMOS chipset for 10 Gbit/s communication [A]. In: Radio Frequency Integrated Circuits Symposium[C]. Seattle, 2002. 93-96.

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