多晶硅薄膜晶体管泄漏区带间隧穿电流的建模

Modeling of the Band-to-Band Tunneling Current in Polysilicon TFT's Leakage Region

讨论了带间隧穿(BBT)效应在多晶硅薄膜晶体管所有的泄漏机制中占主导地位的条件因素,说明了在高场或低温情况下,泄漏电流主要来自带间隧穿.考虑了BBT的两个产生区域——栅漏交叠处和靠近漏端的PN结耗尽区,分析了陷阱态密度以及掺杂浓度对BBT电流的影响,最后提出了一个适用于多晶硅薄膜晶体管泄漏区的带间隧穿电流模型.

The condition under which the band-to-band tunneling(BBT)effect becomes the major leakage mechanisms in the polysilicon TFT is discussed.It is proved that the leakage current is dominated by band-to-band tunneling at large electric fields or low temperature.In this paper two generation regions of BBT effect,the gate-drain overlap region and the depletion region of the PN junction near the drain are considered.The effects of the trap states density and the doping concentration on BBT are analyzed.Finally,a m...