期刊文献+

一种改进的高精度低功耗过温保护电路 被引量:16

An Improved Thermal-Shutdown Circuit with High Precision and Low Power Consumption
下载PDF
导出
摘要 为了防止芯片过热,提高芯片可靠性和稳定性,文中提出一种改进的高精度、低功耗,具有迟滞功能,结构简单的过温保护电路.基于JAZZBCD0.5μm工艺库模型,采用Cadence的Spectre仿真器进行模拟验证,结果表明:当温度超过140℃时,电路输出信号发生翻转,控制芯片停止工作;当温度降至118℃时,恢复芯片工作.在电源电压VDD工作范围2.9~6V内,过温保护阈值变化量为0.275℃,迟滞阈值变化量为0.225℃.典型工作状态下,电路的静态电流为46μA.因此该电路适用于各种电源管理芯片. To avoid overheating and improve the reliability of the chip,an improved Thermal-Shutdown Circuit with high precision and low power consumption is presented in this paper.The proposed circuit features simplicity and excellent performance with high-precision hysteresis.Implemented by JAZZ BCD 0.5μm technology,Spectre simulation shows that the overheating threshold(TH)is 140℃ and the thermal hysteresis threshold(TL)is 118℃.With the power supply range from 2.9 to 6.0V,the variation of TH is 0.275℃ and that of ...
出处 《微电子学与计算机》 CSCD 北大核心 2009年第2期103-106,共4页 Microelectronics & Computer
关键词 过温保护 高精度 迟滞 BCD工艺 thermal shutdown high precision hysteresis BCD technology
  • 相关文献

参考文献4

二级参考文献8

  • 1Baliga B J.Power semiconductor devices for variable-frequency drives[J].Proc IEEE,1994,82(8):1112-1122.
  • 2Hingorani N G,Stalkopf K E.High-power electronics[J].Sci Ameri,1993,269(11):78-85.
  • 3Bellosi A,Esposito L,Schafe E,et al.The influence of microstructure on the thermal conductivity of aluminum nitride[J].J Mater Sci,1994,29(10):5014-5022.
  • 4Nagel M H,Fonderie M J,Meijer G G M,et al.Integrated 1V thermal shutdown circuit[J].IEEE Elec Lett,1992,28 (10):969-970.
  • 5Tom Kugelstadt.Fundamental Theory of PMOS Low-Dropout Voltage Regulators[R].Texas Instruments Application Report,1999,(4).
  • 6Lee Bang S.Technical Review of Low Dropout Voltage Regulator Operation and Performance[R].Texas Instruments Application Report,1999(8).
  • 7Lee Bang S.Understanding the Terms and Definitions of LDO Voltage Regulators[R].Texas Instruments Application Report,1999,(10).
  • 8Rincon-Mora G A and Allen P E.A low-voltage,low quiescent current,low dropout regulator[J].IEEE Journal of Solid-State Circuits,Jan.1998,33(1):36-44.

共引文献27

同被引文献76

引证文献16

二级引证文献35

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部