摘要
设计并制作了阻塞型和完全无阻塞型4×4热光SOI(silicon-on-insulator)波导开关阵列。开关单元采用了多模干涉耦合器(MMI)-MZI(Mach-Zehnder interferometer)结构的2×2光开关。阻塞型光开关附加损耗为4.8～5.4dB,串扰为-21.8dB～-14.5dB。完全无阻塞型光开关阵列附加损耗为6.6～9.6dB,串扰为-25.8～-16.8dB。两者的消光比都在17～25dB内变化,开关单元功耗小于230mW。器件的开关时间小于3μs。功耗和开关速度都明显优于SiO2基和聚合物基的开关阵列。
A blocking 4×4 thermo-optic waveguide switch matrix and a strictly nonblocking one are designed and fabricated on silicon-on-insulator(SOI) wafer.General multi-mode interferometers(MMI) and Mach-Zehnder interferometer(MZI) are used to construct 2×2 switch cell.The blocking switch matrix presents the excess loss of 4.8～5.4 dB and the crosstalk of -21.8～-14.5 dB.Nonblocking one presents the excess loss of 6.6～9.6 dB and crosstalk of -25.8～-16.8 dB.Their extinction ratios vary from 17 dB to 25 dB,and the power...
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2009年第3期283-285,289,共4页
Journal of Optoelectronics·Laser
基金
国家高技术研究发展计划资助项目(2002AA3120660)
关键词
开关阵列
热光
SOI
switch matrix
thermo-optic
silicon-on-insulator（SOI）
