ZnS/PS体系的结构和发光特性

Structure and luminescence properties of ZnS/PS system

用电化学阳极氧化法制备了不同孔隙率的多孔硅(PS)样品,然后用脉冲激光沉积(PLD)法在其表面生长ZnS薄膜,研究ZnS/PS复合体系的结构和发光特性。X射线衍射仪(XRD)结果表明,ZnS薄膜的生长具有高度择优取向,在28.5°附近有一很强的衍射峰,对应于β-ZnS(111)晶向。扫描电子显微镜像(SEM)显示,ZnS薄膜表面很不平整并出现空洞,这是由于衬底PS的表面粗糙所致。ZnS/PS复合体系的光致发光(PL)谱的高斯拟合分峰表明,随着衬底孔隙率的增大,在样品B和C的发光谱中,在光谱中间520nm左右都出现了一个新的绿色发光峰,归因于ZnS的缺陷中心发光。位于480nm附近的ZnS的蓝光和520nm附近的ZnS的绿光以及位于600nm处的PS的橙红光叠加在一起,整个ZnS/PS复合体系呈现出较强的白光。

Porous silicon(PS) samples with different porosities were prepared by electrochemical anodization method,and ZnS films were deposited on PS substrates by pulsed laser deposition(PLD).The structure and photoluminescence properties of ZnS/PS systems were studied.X-ray diffraction(XRD) results show that,ZnS films are grown in preferred orientation,and there is an intense diffraction peak at 28.5°,corresponding to β-ZnS(111)orientation.Scanning electronic microscope(SEM) images show that,due to the roughness of...