坩埚下降法生长BSO(Bi_4Si_3O_(12))闪烁晶体

Crystal Growth of BSO(Bi_4Si_3O_(12)) by Bridgman Method for Radiation Detectors

While the light output of BSO crystals is only 20% of the output of currently used BGO(Bi 4Ge 3O 12 )scintillation crystals,the decay time is one third(100ns).It is considered as promising for application as radiation detectors for high energy physics experiments.Based on this advantage,we have been proceeding with our development of large crystals to use practically.In this paper,we will review our results of crystal growth of BSO by Bridgman method and characterization on its scintillation performance. High purity raw materials of Bi 2O 3 and SiO 2 were mixed together,fired at 850℃,re mixed and sintered at 950℃.The charge was then fed into a Pt crucible of 25mm in diameter.For crystal growth,the crucible was lowered at 0.5mm/h in a furnace temperature gradient of about 10℃/cm.

While the light output of BSO crystals is only 20% of the output of currently used BGO(Bi 4Ge 3O 12 )scintillation crystals,the decay time is one third(100ns).It is considered as promising for application as radiation detectors for high energy physics experiments.Based on this advantage,we have been proceeding with our development of large crystals to use practically.In this paper,we will review our results of crystal growth of BSO by Bridgman method and characterization on its scintillation performan...