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GaN纳米线的制备

Fabrication of GaN Nanowires
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摘要 Wurtzite structure gallium nitride, GaN,a direct bandgap semiconductor(3.4 eV at room temperature),is an ideal material for fabrication of blue/green light emit ting diodes(LED),laser diodes(LD),and high power integrated circuits.When used a s the material for LEDs and LDs,GaN has high transforming efficiencies and its d evice s have a long using lifetime of up to 10000 hours,several decuple times longer t han that of conventional light emitting diodes.As a semiconductor material for b lue/green light sources,GaN is non replaceable.It will have important applications in li g ht emitting devices,optical communication systems,compact disk(CD)players,full c olor copying devices,full color printers,high distinguishing laser printers,gr ea t screen full color displaying devices,and super thin TV displaying devices etc . In recent years,GaN has been the focus and hotspot of semiconductor industries,a nd its devices have a shining place in light emitting and laser industries. We synthesized GaN nanowires by a chemical vapor deposition (CVD)method.The nano wires have diameters from 20 nm to 60 nm,and the maximum length is up to 100 μ m .Following figure is the scanning electron microscopy (SEM)image of the as synt hesized GaN nanowires. Wurtzite structure gallium nitride, GaN,a direct bandgap semiconductor(3.4 eV at room temperature),is an ideal material for fabrication of blue/green light emit ting diodes(LED),laser diodes(LD),and high power integrated circuits.When used a s the material for LEDs and LDs,GaN has high transforming efficiencies and its d evice s have a long using lifetime of up to 10000 hours,several decuple times longer t han that of conventional light emitting diodes.As a semiconductor material for b lue/green light sou...
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2000年第S1期141-141,共1页 Journal of Synthetic Crystals
关键词 GaN crystal NANOWIRES vapour method GaN crystal nanowires vapour method

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