在中等阻值范围内NiCr-O系及Cr-Si系电阻薄膜的应用比较

Comparison of NiCr-O and Cr-Si Thin Film Resistors with Mid-Range of Electric Resistance

合金成分、沉积条件以及热处理工艺是影响薄膜性能极其重要的因素 ,为便于电阻薄膜的合理选材 ,分析了应用于中阻值范围内的 Ni Cr- O系及 Cr- Si系溅射薄膜的膜层结构 ,对比了它们在热处理前后的电性能变化情况 ,并通过短期试验考核它们在应用中劣化的可能性 .实验结果表明 ,经退火处理后 ,Cr- Si系溅射薄膜的膜层构成主要为非晶态基体及 Si Ox 氧化物包围纳米级硅化物相 ,而 Ni Cr- O系溅射薄膜的膜层主要由 Cr2 O3和原子范围短程有序的金属相组成 ;Cr- Si系电阻薄膜比 Ni Cr- O系电阻薄膜致密稳定 ,前者在电性能方面具有抗电压击穿、耐潮湿等优点 .

Alloy composition, depositing conditions and annealing procedures are important factors affecting thin-film properties. In order to select suitable materials for resistive films, microstructures of NiCr-O and Cr-Si sputtered films used for the mid-range of resistance were analyzed. Electrical properties of the films before and after annealing were compared. The possibility of degradation was examined by short-time test. The results show that, after annealing, microstructure of Cr-Si sputtered film is nanometers' chromium silicides embedded in amorphous matrix and SiOx, while NiCr-O sputtered film is a mixture of Cr2O3 and atomic short-range order metallic phases. Cr-Si resistive film is tighter and more stable than NiCr-O resistive film, and the former has the advantageous electrical properties to resist puncture voltage and damp.