摘要
采用电子束蒸发法制备了过渡族金属(Fe、Co、Cu)掺杂ZnO薄膜.通过对样品薄膜的结构分析,研究了衬底温度以及Cu掺杂含量对薄结晶状况的影响,获得沿c轴高度择优取向的高质量ZnO薄膜.采用X射线衍射谱(XRD)分析样品结构,并对薄膜的晶粒结构、晶粒尺寸和表面形态进行讨论,认为400℃的衬底温度对硅衬底薄膜是合适的.通过对薄膜磁性能的分析和研究,得出一些有意义的结果:适量过渡金属离子Fe、Co掺杂的ZnO薄膜,在室温下具有铁磁性,而在此基础上掺入少量的Cu离子能改善薄膜的磁性能.
We fabricated ZnO films doped with transition metal of Fe,Co,Cu by using e-beam evaporation method. By analyzing their XRD spectra,we discussed the crystal structures in different conditions such as substrate temperature and Cu contents and obtained the highly c-axis oriented ZnO films. The experiment showed that the substrate temperature of 400 ℃ was ideal for silicon substrates,which conformed to the result of the structure analysis. By analyzing the magnetism of ZnO films,we found that the films appropri...
出处
《广州大学学报（自然科学版）》
CAS
2009年第3期27-30,共4页
Journal of Guangzhou University:Natural Science Edition
关键词
ZNO薄膜
掺杂
电子束蒸发
磁性能
ZnO film
doping
e-beam evaporation
magnetic properties
