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USING WAVELENGTH ROUTING IN THE OPTICAL INTERCONNECTION COMPUTER NETWORK 被引量:2

USING WAVELENGTH ROUTING IN THE OPTICAL INTERCONNECTION COMPUTER NETWORK
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出处 《Transactions of Tianjin University》 EI CAS 2000年第2期107-111,共5页 天津大学学报(英文版)
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参考文献6

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同被引文献15

  • 1Jiao Shilong, Ye Yutang, Chen Tangsheng et al. 2.5 Gb/s GaAs PIN/PHEMT monolithic integrated optical receiver front end[J~. Journal of Optoelectronics .Laser, 2008, 19 (2) : 191-195 (in Chinese).
  • 2Seifouri M, Amiri P, Rakide M. Design of broadband transimpedance amplifier for optical communication systems[J]. Microelectronie Journal, 2015, 46(8): 679- 684.
  • 3Li Yiqun, Huang Hui, Lfi Jihe et al. GaAs based lnP/InGaAs HBT for monolithic integrated optical receiver application[J]. Journal of Optoelectronics .Laser, 2009, 20 (1) : 1-4 (in Chinese).
  • 4Huang Beiju, Zhang Xu, Chen Hongda. 1-Gb/s zero-pole cancellation CMOS transimpedanee amplifier for Gigabit Ethernet applications[J]. Journal of Semiconductors, 2009, 30(10): 105005.
  • 5Aznar F, Gaberl W, Zimmermann H. A 0. 18 ~tm CMOS transimpedance amplifier with 26 dB dynamic range at 2.5 Gb/s[J]. Microelectronics Journal, 2011, 42(10): 1136- 1142.
  • 6Park S M, Yoo H J, 1.25-Gb/s regulated cascode CMOS transimpedance amplifier for Gigabit Ethernet applica- tions[J]. IEEE Journal of Solid-State Circuits, 2004, 39(1): 112-121.
  • 7Lu T T, Lee H C, Wang C Set al. A 4.9-mW 4-Gb/s single- to-differential TIA with current-amplifying regulated cas- code [C]. In: International Symposium on VLSI Design, Automation, and Test. Hsinchu, Taiwan, China, 2012.
  • 8Shirazi A H M, Molavi R, Woo P Set al. A low-power DC- to-27-GHz transimpedance amplifier in 0.13Him CMOS using inductive-peaking and current-reuse techniques [C]. In: International Midwest Symposium on Circuits and Sys- tems. College Station, TX, USA, 2014.
  • 9Lee J, Park H G, Kim I S et al. A 6 Gb/s low power trans- impedance amplifier with inductor peaking and gain con- trol for 4-channel passive optical network in 0.13 p.m CMOS [J]. Journal of Semiconductor Technology and Sci- ence, 2015, 15 (1) : 122-130.
  • 10Aflatouni F, Hashemi H. A 1.8 mW wideband 57 dBf~ transimpedance amplifier in 0.13 gm CMOS [C]. In: 1EEE Radio Frequency Integrated Circuits Symposium. Boston, USA, 2009.

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