摘要
Diamond films were deposited on the cemented carbide WC-15%Co substrates by a hot-filament chemical vapor deposition (HF CVD) reactor. The substrate surfaces were chemically pretreated by the following two-step etching method: first using Murakami reagent for 1-3 min, and second using an HNO3:HCl=1:1 solution for 10-40 min. It is indicated that the Co content of the substrate surfaces could be reduced from 15% to 0.81-6.04% within the etching depth of 5-10μm, the surface roughness of the substrates was increased up to Ra=1.0μm, and the substrates hardness was decreased from 89.0 HRA to 83.0 HRA after the two-step etching. It is observed that the morphologies of the diamond films on the WC-15%wt Co substrates emerge in various shapes. The indentation testing shows that the good adhesion between diamond film and the substrate after HF CVD deposition could be obtained.
Diamond films were deposited on the cemented carbide WC-15%Co substrates by a hot-filament chemical vapor deposition (HF CVD) reactor. The substrate surfaces were chemically pretreated by the following two-step etching method: first using Murakami reagent for 1-3 min, and second using an HNO3:HCl=1:1 solution for 10-40 min. It is indicated that the Co content of the substrate surfaces could be reduced from 15% to 0.81-6.04% within the etching depth of 5-10μm, the surface roughness of the substrates was increased up to Ra=1.0μm, and the substrates hardness was decreased from 89.0 HRA to 83.0 HRA after the two-step etching. It is observed that the morphologies of the diamond films on the WC-15%wt Co substrates emerge in various shapes. The indentation testing shows that the good adhesion between diamond film and the substrate after HF CVD deposition could be obtained.
基金
Acknowledgements - The authors are grateful to thank the staff of Hunan Yin Zhou Nonferrous metals Hi-Tech. Ltd. Company for cem
