DIAMOND HETEROEPITAXY-NUCLEATION, INTERFACE STRUCTURE, FILM GROWTH
DIAMOND HETEROEPITAXY-NUCLEATION, INTERFACE STRUCTURE, FILM GROWTH
摘要
The present understanding of diamond heteroepitaxy by bias-enhanced chemical vapour deposition on technologically relevant substrate materials is briefly reviewed. First the early stages of diamond nucleation and the diamond film growth as well as influences of various deposition conditions are described. Then the results of microscopic investigations of the structure of interfaces and of grain boundaries are summarized.
The present understanding of diamond heteroepitaxy by bias-enhanced chemical vapour deposition on technologically relevant substrate materials is briefly reviewed. First the early stages of diamond nucleation and the diamond film growth as well as influences of various deposition conditions are described. Then the results of microscopic investigations of the structure of interfaces and of grain boundaries are summarized.
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