摘要
Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C+ ion implantation and subsequent solid phase epitaxy (SPE). Two-step annealing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step annealing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.
Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C+ ion implantation and subsequent solid phase epitaxy (SPE). Two-step annealing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step annealing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.
基金
The authors would like to thank Dr. X. W. Zhang for performing the ion implantation experiments. This work was supported by the National Natural Science Foundation of China (Grant No. 69876017).
