摘要
A systematic investigation of the role of hydrogen in hydrogenated amorphous substo-ichiometric silicon oxide films (a-SiO:H) implanted with erbium is presented. The experimental results show that Er3+ luminescence increases with annealing temperature up to 535℃ and then drop sharply. Our work suggests that hydrogen evolution during annealing below 535℃ results in a reduction of defects in the films, and hence an improved Er3+ emission.
A systematic investigation of the role of hydrogen in hydrogenated amorphous substo-ichiometric silicon oxide films (a-SiO:H) implanted with erbium is presented. The experimental results show that Er3+ luminescence increases with annealing temperature up to 535℃ and then drop sharply. Our work suggests that hydrogen evolution during annealing below 535℃ results in a reduction of defects in the films, and hence an improved Er3+ emission.
基金
This work was supported by the National Natural Science Foundation of China (Grant No.69976028).
