摘要
Nanostructured C-Cu thin films were deposited by reactive sputtering method and cosputtering method. The relationships between microstructures, properties, and deposition parameters were studied and the results obtained from TEM, AFM, and XPS. indicate that the thin films are nanostructural, and have good in-depth uniformity. The selected area electron diffraction (SAED) found that the nanosize Cu particles have the fcc structure and the others are amorphous carbon or nanocrystallized graphitic carbon. The peak positions of the Cu and C in XPS indicate them to be at the elemental state. In the JR transmission spectrum, diamond two-phonon absorption and graphite Reman peaks were observed, which suggests microcrystal diamond particles and graphite components exrist in the C-Cu film. The higher electrical resistivity was obtained.
Nanostructured C-Cu thin films were deposited by reactive sputtering method and cosputtering method. The relationships between microstructures, properties, and deposition parameters were studied and the results obtained from TEM, AFM, and XPS. indicate that the thin films are nanostructural, and have good in-depth uniformity. The selected area electron diffraction (SAED) found that the nanosize Cu particles have the fcc structure and the others are amorphous carbon or nanocrystallized graphitic carbon. The peak positions of the Cu and C in XPS indicate them to be at the elemental state. In the JR transmission spectrum, diamond two-phonon absorption and graphite Reman peaks were observed, which suggests microcrystal diamond particles and graphite components exrist in the C-Cu film. The higher electrical resistivity was obtained.
