摘要
Fe-O/AlO_x/Fe-O tunnel junctions were prepared by reactive magnetronsputtering under mixed working gas Ar+2 percent O_2. The insulating AlO_x layer of 1-2nm thicknesswas sputtered directly from A1_2O_3 target. Electrode layers were made of 80at. percent iron and20at. percent oxygen. Bottom Fe-O electrode deposited on glass substrate annealed at 473K at thepressure of 3 X 10^(-4) Pa for an hour shows disparate crystalline grain structure, lower electricalresistance and coercivity compared to the as-deposited top electrode. Only crystalline structrureof alpha-Fe is observed in both electrodes. Large tunnel magnetoresistance in large Fe-O/AlO_x/Fe-Ojunctions of 1cm^2 is observed at room temperature and the I-V characteristic curve of the junctionshows that the barrier of the junction is of high quality.
Fe-O/AlO_x/Fe-O tunnel junctions were prepared by reactive magnetronsputtering under mixed working gas Ar+2 percent O_2. The insulating AlO_x layer of 1-2nm thicknesswas sputtered directly from A1_2O_3 target. Electrode layers were made of 80at. percent iron and20at. percent oxygen. Bottom Fe-O electrode deposited on glass substrate annealed at 473K at thepressure of 3 X 10^(-4) Pa for an hour shows disparate crystalline grain structure, lower electricalresistance and coercivity compared to the as-deposited top electrode. Only crystalline structrureof alpha-Fe is observed in both electrodes. Large tunnel magnetoresistance in large Fe-O/AlO_x/Fe-Ojunctions of 1cm^2 is observed at room temperature and the I-V characteristic curve of the junctionshows that the barrier of the junction is of high quality.
基金
This work was partly supported by theNational Natural Science Foundation of China (Grant No. 19974005).
