摘要
报道了在等离子体作用下,以CO2/H2为氧源,Zn(C2H5)2为锌源,N2为载气,在Si(111)衬底上采用自行设计等离子体化学气相沉积(PECVD)装置来生长的ZnO薄膜。采用X射线衍射仪(XRD)、原子力显微镜(AFM)和场发射扫描电镜分别对不同衬底温度生长的薄膜样品进行了组成、表面和横截面的形貌表征,并且测试了薄膜的PL谱。研究结果表明,衬底温度直接影响薄膜的结晶质量。随衬底温度的升高,ZnO薄膜的结晶取向性开始增强,晶粒尺寸增大。在衬底温度约为450℃时,生长的ZnO薄膜有很强的择优取向性。
ZnO thin films were deposited on Si substrate by self-designed plasma enhanced chemical vapor deposition using carbon dioxide/hydrogen gas and diethylzinc carried by nitrogen gas as reactant sources. The components, surface and section morphologies of the films deposited at different, substrate temperature were respectively investigated by X-ray diffractometer, atomic force microscopy and field emission scanning electron microscopy, and their PL spectra were tested. The results show that the substrate temperature directly influences on the crystallization properties of the films. With increasing the temperature, the preferred orientation of ZnO films is improved and the grains of the films possess a strong preferred orientation at 450°C, and their grains are coarsened.
出处
《微细加工技术》
EI
2007年第2期28-33,共6页
Microfabrication Technology
基金
江西省材料中心基金资助项目(ZX200401007)
南昌航空工业学院博士基金资助项目
江西省教育厅科技项目资助(DB200501107)
