采用氨化技术制备成簇生长的光滑线状氮化镓

Smooth and Thread-shaped GaN Grown in Cluster by Ammoniating Technique

通过在1 000℃时氨化Ga2O3/MgO/Si(111)薄膜15 min,制备出成簇生长的光滑的长直线状GaN。用X射线衍射(XRD)、扫描电子显微镜(SEM)和高分辨率电子显微镜(HRTEM)对样品进行测试分析。结果表明,线状GaN为六方纤锌矿结构单晶相,表面光滑,且成簇生长,直径在200 nm^400 nm左右,其长度可达5μm^20μm。

Straight and smooth GaN threads were grown in cluster from some tiny holes when Ga2O3 film deposited on MgO/Si was ammoniated for 15 min in a environment of flowing ammonia atmosphere at 1000°C. The as-synthesized GaN threads were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM) and high-resolution transmission electron microscopy (HRTEM), respectively. The results demonstrate that these threads are single crystals with a hexagonal wurtzite structure and possess a smooth surface, and their average diameter ranges from 200 nm to 400 nm and their length changes from 5 μm to 20 μm.