基于光刻版的无留膜紫外纳米压印技术研究

Study of Nanoimprint Technology without Residual Layer Based on Photolithography Mask

针对纳米压印光刻技术中压印脱模后的留膜去除问题,提出了一种基于光刻版的无留膜紫外纳米压印技术。采用传统的光刻版作为紫外压印模版,由于模版上铬层的遮蔽作用,使得铬层下面的光刻胶不被曝光,从而可以轻易地被去除。实验结果表明,该技术综合了压印与光刻各自的优点,可以获得无留膜厚度的压印图形,省去了压印后的留膜刻蚀工艺,从而避免了由于留膜厚度不均匀所带来的过刻蚀或欠刻蚀的问题。

For the removal of residual layer after template is released during nanoimprint lithography,a new UV-nanoimprint technology without residual layer based on photolithography mask was proposed.When the conventional photolithography mask is employed as UV-nanoimprint template,the resist beneath the chromium layer on the template is unexposed due to the light-blocking of the chromium layer so that the residual layer can be easily removed with a simple developing process.The experimental results indicate that print patterns without residual layer can be obtained because the new UV-nanoimprint technology inherits the merits of nanoimprint and photolithography.Simultaneously,the over-etching or under-etching due to non-uniform of thickness of the residual layer is avoided because the process of etching the residual layer is not employed.