一种新型的全局互连结构及其加工方法

A Novel Global Interconnects Structure and Its Fabrication

随着特征尺寸的缩小,互连成为制约集成电路性能提高和成本下降的主要因素。为了降低互连延迟,提出了一种全新的全局互连结构,即利用掩膜电镀和CMP技术形成三维的铜互连结构,再利用牺牲层技术将三维结构镂空,得到悬空的全局互连结构。该结构可大大地降低全局互连对延迟的影响。

A technology for micro-fabrication freestanding structure in three-dimensions global interconnects was presented.The three-dimensions copper interconnects were fabricated by electrolytic photoetching and following chemical mechanical polish,finally the three dimensions copper structure was released by removing the sacrifice layer.It is demonstrated that freestanding structure has the potential to greatly reduce the capacitance in the global interconnect.