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功率器件、电路和系统用的计算机辅助设计技术的进展 被引量:2

Progress in Technology CAD for Power Devices, Circuits and Systems
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摘要 最近10年,计算机辅助设计技术(TCAD)的应用已在工业界和学术界普及。计算机硬件和软件迅猛发展和数值算法用的物理模型的精度、速度和鲁棒性显著提高,使TCAD作为晶片加工和计量的补充实验方法,成为降低成本的有效技术。 Over the past decade, the Utilization of technology CAD(TCAD) tools has become widespread in industry and academia. The enormous progress in computing hardware and software technology, together with significant advances in physical modeling accuracy, and speed and robustness of numerical algorithms, have made TCAD to a cost – effective albeit powerful technology that complements experimental approaches to wafer processing and metrology.
机构地区 美国Synopsys公司
出处 《电气技术》 2006年第3期116-121,共6页 Electrical Engineering
关键词 计算机辅助设计 建模 分级模拟 CAD Modeling Process Simulation
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  • 1[1]For a summary of TCAD in power up to 1993,please consult:W.Fichtner,T.Feudel,K.Kells,K.Lilja,J.Litsios,S.Müller and N.Strecker,"TCAD in power device design and optimization," 1993 IEDM Technical Digest,pp.93-96.For ane xcellent survey of the current status of process simulation:M.Johnson,"Process Simulation," in The CRC Handbook of EDA for IC Design,CRC press,Boca Raton,FL,Eds.G.Martin,L.Lavagno,and L.Scheffer
  • 2[2]European projects ESPRIT 23643 (ESDEM),GRD1-2000-25092 (HIM RATE) and IST-2000-30033(DEMAND)
  • 3[3]S.Reggiani,M.Valdinoci,L.Colalongo,M.Rudan,G.Baccarani,A.D.Stricker,F.Illien,N.Felber,W.Fichtner and L.Zullino,"Electron and hole mobility in silicon at large operating temperatures-part Ⅰ:bulk mobility," IEEE Trans.on Electron Devices ED-49,490-499 (2002)
  • 4[4]S.Reggiani,E.Gnani,M.Rudan,G.Baccarani,C.Corvasce,D.Barlini,M.Ciappa,W.Fichtner,M.Dension,N.Jensen,G.Groos,and M.Stecher,"Experimental extraction of the electron impactionization coefficient at large operating temperatures,"2004 IEDM Technical Digest,pp.407-410.
  • 5[5]W.Fichtner,K.Esmark,and W.Stadler,"TCAD Software for ESD On-Chip Protection Design,2001IEDM Technical Digest,14.1.1-4
  • 6[6]N.Jensen,G.Groos,M.Denison,J.Kuzmik,D.Pogany,E.Gornik,and M.Stecher,"Coupled Bipolar transistors as very robust ESD protection devices for automotive applications," Proc.EOS/ESD Symp.(2003)
  • 7[7]D.Pogany,S.Bychikhin,C.Fuerboeck,M.Litzenberger,E.Gornik,G.Groos,K.Esmark,and M.Stecher,"Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry,"IEEE Trans.on Electron Devices ED-49,2070-2079 (2002)
  • 8[8]M.Schenkel "Substrate current effects in smart power ICs",Ph.D.Thesis ETH (2003); available at Hartung-Gorre Printing House,Konstanz,Germany
  • 9[9]N.Seliger,J.Rackles,H.Schwarzenbauer,W.Kiffe,and S.Bolz,"Compact and robust power electronic packaging interconnection technology for an integrated starter generator," Haus der Technik Fachbuch Band 14,Expert,Essen 2002,pp.248-255
  • 10[10]R.Knorr,M.Bienert,S.Bolz,G.Lugert,and P.Skotzek,"(U)berblick und Perspektiven des 14/42V Bordnetzes Komponenten,Architek tur und M(o)glichkeiten," Elektronik im Kraftfahrzeug,VDI Gesell-schaft Fahrzeug-und Verkehrstechnik,Düsseldorf (2000)

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