摘要
Dynex半导体公司用于功率双极半导体器件制造的铝注入技术(“i2”)的问世得到文献的肯定。本文介绍采用这种技术所获得的各种益处,特别讨论满足增加HVDC(高压直流输电)开关功率的需求、改善整流二极管制造能力、提高脉冲电源的极高电压/极大电流能力,以及大面积晶闸管并联均流的有效参数匹配等重要课题。本文也涉及到器件键合和150mm直径的硅片制造事项。“i2”技术的灵活性最适合于为可预见的未来提供最佳的功率器件。
The emergence of aluminium implant technology (“i2”) at Dynex Semiconductor for the manufacture of power bipolar semiconductor devices has been well documented. This paper addresses a variety of applications benefits to be gained by use of this technology. In particular, meeting the demand for increasing HVDC switching power, improved converter diode manufacturability, very high voltage/current capability for pulse power, and efficient parameter matching for large area thyristor parallel sharing are discussed. Bonding devices and 150mm-wafer diameter fabrication are also covered. It is concluded that the flexibility of “i2” technology is most suited to provide state of art power devices well into the foreseeable future.
出处
《电气技术》
2006年第7期82-86,共5页
Electrical Engineering
