摘要
在这篇文章中,介绍了平面型SONIC软恢复二极管的新系列,电压范围从600V到1800V,并有不同的额定电流。采用从硅片背面进行深的磷扩散和控制轴向寿命抑制剂的办法开发出了带有拖尾电流的快恢复及软恢复二极管。被提及的二极管在整个工作温度范围内性能稳定,并且对于温度的变化正向电压降的变化可以忽略不计。SONIC二极管是为高频应用而设计的,在高频应用方面需要稳定的开关特性。文章还比较了SONIC二极管和用铂或金作为寿命抑制剂的标准快恢复外延二极管(FRED)在25℃到125℃下的开关损耗。
In this paper, new families of planar SONIC soft recovery diodes in the 600V to 1800V voltage range with different current ratings are introduced. The fast and soft recovery diodes with tail current were developed using a combination of deep diffused phosphorous wafers from the backside of a wafer and controlled axial lifetime killers. The proposed diodes give stable performance throughout its operating temperature range and maintain negligible forward voltage drop with respect to temperature. The SONIC diodes are designed for high frequency applications where rugged switching performance is required. The switching losses at 25℃ to 125℃ are compared between SONIC and standard Fast Recovery Epitaxial Diodes (FRED) using platinum or gold as lifetime killers.
出处
《电气技术》
2006年第7期87-90,81,共5页
Electrical Engineering
