CMOS工艺中钨的化学机械抛光技术

Tungsten CMP Technology in CMOS Manufacturing Process

介绍了深亚微米CMOS集成电路中研制的关键技术———钨化学机械抛光,比较了化学机械抛光技术与传统反应离子回刻法在金属层与层之间的垂直连接中的优缺点,并指出了钨化学机械抛光工艺中尚存的一些问题,最后对该工艺进行了总结与展望。

An overview of the key process technology in deep sub-micron CMOS manufacturing-tungsten CMP is given. The advantages and disadvantages of tungsten CMP are compared to RIE etch back when forming vertical connection from metal to metal layer. Some existing issues such as high cost, low throughput, etc. are discussed. The future work and prospects of tungsten CMP technology are summarized.