绝缘体上硅射频LDMOS的大信号模型研究

The Research of Large-signal Model for RF LDMOSFETs

射频功率器件对整个射频放大电路的性能起到决定性的影响。而这类器件依然没有精确、统一的电路模型。因此,基于分支电路模型建立了一种新型SOI LDMOS的大信号电路模型。该模型是一个非线性电路模型,包括了对直流特性的模拟、S参数的模拟,以及其他有关参数的提取。仿真结果表明该模型能比较精确的模拟RF SOI LDMOS器件的直流特性以及频率特性,所以可以利用这个电路模型辅助射频功率放大器设计,为前端设计的电路仿真提供模型的支持。

RF power device plays a determinant role on performances of RF power amplifier.However,there has not any accurate and uniform model developed for this device up to date.Therefore a new large signal model was found for SOI LDMOS,which is a nonlinear model based on sub-circuit model.The model consists of modeling of DC character and S-parameter modeling and extracting of other related parameters.The simulation results indicate that this model could simulate the DC character and frequency performance of RF SOI...