直流磁控溅射法制备c-BN膜

Preparation of c-BN Film by DC Magnetic Control Sputtering Method

本研究用一种新的方法—直流磁控溅射法制备了立方氮化硼膜(c-BN)。因为它的沉积速率较高，未来工业化的潜力较大，这一技术对工业界具有很大意义。c-BN膜的沉积过程由过去的射频系统改造而来。直流溅射的靶材选用了碳化硼，靶及试样台均接负极。我们将试样台放在一圆形电磁线圈的中央，即采用非平衡磁控模式。试验证明，试样台上的离子流密度及高子与中性粒子的比例是重要的试验参数。通过试验，在单晶硅片及钢衬底上沉积了几近单相的c-BN膜，并用电子探针(EPMA)、X射线光电子谱(XPS)和红外谱(IR)对膜的成分和结构进行了分析。膜的硬度和摩擦系数测量表明，所制备的c-BN膜具有出色的机械和摩擦学性能。

In this study, prepares c-BN film by a new method, DC magnetic control sputtering method. Because its rate of deposition is high and it has great potentialities in future industrializa tion, this technique is significant in industry. The deposition process of c-BN film comes from modifying original r. f. system. The target material of DC sputtering applies boron carbide. Both the target and sample platform connect with negative. We set the sample platform in the center of a round electromagnetic coil, i. e. use the mode of imbalance magnetic control. The test proves that the density of ion flowing and the ratio of ions to neutral particles are important testing coefficients. By the test, deposit approximate single phase c-BN film on monocrystal silicon and steelbase,and analyze the composition and structure of the film by EPMA,KPS and IR.The measurement of the hardness and wear coefficient shows the c-BN film has great mechanical and wearing properties.