摘要
采用射频磁控溅射法在Si衬底上制备了高c轴择优取向的ZnO薄膜,研究了退火对ZnO薄膜的晶粒尺度和发光光谱的影响。XRD结果显示退火可以改善ZnO薄膜的结构特性,PL谱结果显示退火对ZnO薄膜的发光强度产生很大影响。
ZnO thin films with strong c-axis prefered orientation have been successfully deposited on Si substrate by using reactive radio frequency magnetron sputtering.The influence of annealing on the microstructure and photoluminescence(PL)properties of ZnO films was investigated by X-ray diffraction(XRD)and photoluminescence(PL)measurement.The XRD results shows that annealing can improved the crystallinity of the obtained films。The PL of ZnO films were affected by annealing in different ambients can affect the emission of the films distinctly.
出处
《光学技术》
CAS
CSCD
北大核心
2006年第z1期595-597,共3页
Optical Technique
关键词
光学材料
ZNO薄膜
光致发光
射频磁控溅射
optical materials
ZnO films
photoluminescence
radio frequency magnetron sputtering
