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LBIC技术研究平面结与台面结InGaAs探测器 被引量：1

Photoactive area of planar and mesa InGaAs linear detector by LBIC technique
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摘要 室温铟镓砷(InGaAs)焦平面技术在军事与航天工业上的应用越来越广泛,铟镓砷(InGaAs)焦平面列阵中探测器的尺寸正不断减小,这使得常规工艺形成的光伏探测器的有效光敏元面积扩大的问题越来越突出.本文利用激光诱导电流检测(LBIC)系统测试了台面结和平面结InGaAs (p-i-n)探测器芯片的光敏元,证实了有效光敏面扩大的存在.从实验结果看,结区的侧向收集效应是造成台面工艺形成的光伏器件光敏元面积扩大的主要因素;而掺杂离子的横向扩散和结区的侧向收集效应,是平面工艺形成的光伏器件光敏元面积扩大的主要因素.
作者 张可锋 吴小利 唐恒敬 吕衍秋 乔辉 贾嘉 李雪 龚海梅
机构地区 中国科学院上海技术物理研究所传感技术国家重点实验室 中国科学院研究生院
出处 《红外与激光工程》 EI CSCD 北大核心 2007年第z1期23-27,共5页 Infrared and Laser Engineering
关键词 LBIC技术 INGAAS 探测器 光敏感区
分类号 TN21 [电子电信—物理电子学]
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参考文献11

  • 1[1]OLSEN G H,JOSHI AM,BAN V S.Current status of InGaAs detector arrays for 1-3 μm[C]//Proceedings of SPIE,Infrared Technology XVII,San Diego,California,1991,1540:596-605.
  • 2[2]HONDT M D',moerman i,demeesterp.dark current optimisatinn of 2.5 um wavelength.2% Mismatched InGaAs Photodetectors on InP[C]//Proceedings of IEEE,10th Intern Conf On Indium Phosphide and Related Materials,Tsukuba,Japan,1998,1:489-492.
  • 3[3]JOSHIA M,BANV S,MASONS,et al.Kosonocky.512 and 1024 element linear InGaAs detector arrays for near infrared(1-3 μm)environmental sensing[C]//Proceedings of SPIE,Infrared Detectors State of The Art,San Diego,California,1992,1735:287-295.
  • 4[4]Olsen G H,Joshi A M,Ban V S.et al.Multiplexed 256 element InGaAs detector arrays for 0.8-1.7μm room-temperture operation[C]//Proceedings of SPIE,Infrared Technology XⅣ,San Diego,Califonga,1988,972:279-285.
  • 5[5]KOZLOWSKI L J,TENNANT W E,ZANDIAN M,et al.SWIR staring FPA perfrormance at room temperature[C]//Proceedings of SPIE Infrared Detectors and Focal Plane Arrays Ⅳ,1996,2746:93-100.
  • 6[6]MOYJ ECHABBAL J J,CHAUSSAT S,et al.Buttable arrays of 300 multiplexed InGaAs photodiodes for SWIR imaging[C]//Proceedings of SPIE,Infrared Detectors,Sensors and Focal Plane Arrays,San Diego,California,1986,686:93-95.
  • 7[7]MOY J P HUGON X,CHABBAL J,et al.3000 InGaAs photodiode multiplexed linear array for SPOT4 SWIR channel[C]//Proceedings of SPIE,1989,1107:137-151.
  • 8[8]RUUD W M,HOOGEVEEN,RONALD J.et al.Extended wavelength InGaAs infrared(1.0-2.4μm)detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere[J].Infrared Physics & Technology,2001.42:1-16.
  • 9[9]DAVE H,DEWAN C,PAUL S.et al.AWtFS Camera For Resourcesat[C]//Proceedings of SPIE,2006,6405:6405X01-6405X11.
  • 10[10]BAJAJ J,TENNANT W E.Remote contact LBIC imaging of defects in semiconductors[J].Journal of Crystal Growth,1990,103:170-178.

同被引文献12

  • 1MOY J p, HUGON X, CHABBAL J J, et al. 3000 InGaAs photodiode multiplexed linear array for SPOT4 SWIR channel [C]//Proeeedings of SPIE, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors,1989,1107:137-151.
  • 2HOOGEVEEN R W M, RONALD J vat der A, GOEDE A P H. Extended wavelength InGaAs infrared (1.0-2.4 p,m) detector arrays on SCIAMACHY for space-based spectrometry of the earth atmosphere[J].Infrared Physics & Technology, 2001,42(1): 1-16.
  • 3YUN I, HYUN K S. Zinc diffusion process investigation of InP-based test structures for high-speed avalanche photodiode fabrication [J].Mieroeleetronics Journal, 2000,31:635-639.
  • 4MARTIN H E, MICHAEL J L, SUGG A R, et al. Zinc diffusion in InAsP/InGaAs heterostructures [J]. Journal of Electronic Materials, 1999,28( 12): 1433-1439.
  • 5TODD H, ALBERT K H, CHRIS L, et al. Capacitive effects on quantitative dopant profiling with scanned electrostatic force microscopes[J].J Vac Sei Teehnol B,1996,14(1):457-462.
  • 6ROGER A, BRYANT M, MICHAEL Y. Junction metrology by cross-sectional atomic force microscopy[J].J Vae Sci Tehnol B, 1996,14(1) :452-456.
  • 7KOPANSKI J J, MARCHIANDO J F, BERNING D W. Scanning capacitance microscopy measurement of two -dimensional dopant profiles across junctions[J].J Vae Sci Technol B, 1998,16 (1):339-343.
  • 8BUH G H, CHUNG H J, YI J H, et al. Electrical characterization of an operating Si pn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy[J].J Appl Phys, 2001,90(1):443-448.
  • 9SHIKLER R, MEODED T, FRIED N, et al. Potential imaging of operating light-emitting devices using Kelvin force microscopy [J].Appl Phys Lett,1999,74,(20):2972-2974.
  • 10PARK S E, NAUVEN N V, KOPANSKI J J, et al. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures[J].J Vac Sci Technol B,2006,24(1):404-407.

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红外与激光工程
2007年 第z1期

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