半导体激光雷达的外调制器综述

Survey on exterior modulator for diode laser radar

随着无扫描半导体激光雷达技术的突破,要求对数十瓦的大功率连续半导体激光源有更好的调制特性。文中比较各种调制方式,认为LiNbO3体调制方案是实现大功率半导体激光调制的有效途径,但其也有调制电压高、集成化小型化能力差的缺陷。基于外延生长技术半导体集成光电子工艺的发展,生长多量子阱和垂直腔面发射激光面阵成为现实。认为采用电吸收调制器与面发射激光器的集成单元构成二维密集阵列有望获得较高调制质量的大功率激光输出,可实现激光雷达的小型化。

With the breakthrough of scannerless semiconductor lidar technique,semiconductor laser with large power up to decades watt and better modulation character are need.Compared to others,massive modulation using LiNbO3 is an effective technique to get modulated large power laser,however there are some drawbacks such as high tension is required and hard to reduce system volume.With the help of epitaxial growth,it’s possible to grow MQW and VCSEL array.A promising technique based on planar array integrated by EAM and VCSEL is hopeful to get high quality modulated large power laser and reduce the volume of lidar.