摘要
用分子束外延(MBE)方法在GaAs(001)衬底上外延生长了InSb薄膜,并研究了异质外延InSb薄膜生长中缓冲层对材料质量的影响。采用原子力显微镜(AFM)、透射电子显微镜(TEM)、X射线双晶衍射(DCXRD)等方法研究了InSb/GaAs薄膜的表面形貌、界面特性以及结晶质量。通过生长合适厚度的缓冲层,获得了室温下DCXRD半高峰宽为272″,迁移率为64 300 cm2V-1s-1的InSb外延层。
The InSb epitaxial thin films have been growth on GaAs(100) by MBE,efficacy of the buffer on quality heteroepitaxal InSb is studied and epitaxial thin film characterization will be presented and analyzed,surface topography,interface characterization and crystalline quality are discussed by atomic force microscopy(AFM),transmission electron microscopy and x-ray diffraction(XRD) etc.Experiments obtained a room temperature FMWH of 272″ and hall mobility of 64 300 cm2V-1s-1.
出处
《红外与激光工程》
EI
CSCD
北大核心
2007年第z1期692-695,共4页
Infrared and Laser Engineering
基金
高功率半导体激光国家重点实验室基金资助项目(No.ZS3604)
