1.064μm脉冲高功率量子阱激光器阵列

1.064 μm Pulsed High Power Quantum Well Laser Array

采用应变GaInAs/AlGaAs量子阱结构 ,研制出了激射波长为 1.0 6 4 μm的激光器线阵列。在 2 0 0ns脉宽、10 0kHz和 5 0A工作条件下 ,5mm线阵列的输出功率达到了 35W ,将三条线阵列进行了二维组装 ,获得了 10

m laser array with strained GaInAs/AlGaAs quantum well is fabricated. 35 W output power is emitted from a 5 mm array under the condition of 200 ns pulse duration and 100 kHz repetition at 50 A.Peak output power of 102 W can be obtained when three arrays are stacked into a 2-D device.