摘要
介绍了用 (NH4 ) 2 S和P2 S5 NH4 OH处理半导体激光器的表面来避免光学灾变的方法。
The effect of (NH 4) 2S and P 2S 5-NH 4OH treatment of the facet of the laser diodes on the non-radiative current and catastrophic optical damage (COD) are introduced. The focus is on the window structure by selective N ion implantation which has been applied to overcome the COD.
出处
《半导体光电》
CAS
CSCD
北大核心
2002年第2期87-89,共3页
Semiconductor Optoelectronics
