摘要
基于pin结构的a Si∶H太阳能电池中的空间电荷效应 ,讨论了a Si/poly Si叠层太阳能电池的稳定性。结果表明 ,在光照射下 ,光生空穴俘获造成了a Si∶H中正空间电荷密度的增加 ,从而改变了电池内部的电场分布 ,提高了a Si∶H薄膜中的电场强度。空间电荷效应不会给a Si/poly Si叠层结构中的a Si∶H薄膜带来准中性区 (低场“死层”) ,也没有发生a Si/poly Si叠层太阳能电池的光诱导性能衰退 ,因而a Si/poly
Based on the space charge effect in pin a-Si∶H solar cells, the stability of a-Si/poly-Si tandem solar cells is investigated. The results indicate that due to photo-generated hole trapping, the increased positive space charge density changes the electric field distribution and raises the electric intensity throughout the a-Si∶H film. Under illumination, the space-charge effect won't cause a quasi-neutral region (low-field 'dead layer') in a-Si∶H film of Si/poly-Si tandem structures, neither will it result in light-induced degradation in a-Si/poly-Si tandem solar cells. It is shown that the a-Si/poly-Si tandem structure possesses high stability.
出处
《半导体光电》
CAS
CSCD
北大核心
2002年第2期92-95,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金资助项目 (5 9872 0 37)
