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MOCVD生长Ⅲ族氮化物镓源的选择 被引量：2

Selection of Gallium Growth by MOCVD
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摘要 MOCVD是生长Ⅲ族氮化物材料最成功的技术之一。镓源的选择是该技术中重要的一环。详细比较了三甲基镓和三乙基镓两种主要的镓源对生长样品在微结构、表面形态、电学性质和光学性质方面的不同影响 。 MOCVD is one of the most successful technologies in the growth of group Ⅲ nitride.The selection of gallium is an important procedure in this technology.In this paper,the influence of two major gallium sources(TMGa and TEGa)on the microstructure,morphology, electronic and optic properties of the samples is discussed in details.Factors causing different influence are proposed.
作者 顾星 叶志镇 赵炳辉
机构地区 浙江大学硅材料国家重点实验室
出处 《半导体光电》 CAS CSCD 北大核心 2002年第2期109-113,共5页 Semiconductor Optoelectronics
基金 国家自然科学基金资助项目 (6 0 0 46 0 0 1)
关键词 MOCVD 镓源 Ⅲ族氮化物 GAN TMGa TEGa MOCVD Ga source group Ⅲ nitride GaN TMGa TEGa
分类号 TN304.055 [电子电信—物理电子学]
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参考文献13

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同被引文献28

  • 1刘彩玫,张学英,秦曾言,管督.结晶法提纯在高纯镓生产中的应用[J].轻金属,2005(2):19-21. 被引量：10
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半导体光电
2002年 第2期

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