摘要
氧等离子体处理高阻P型、〈10 0〉硅片上的聚硅烷涂层 ,制备了SiO2 /Si结构。用C V技术测量其MOS结构平带电压 ,结果表明平带电压随氧等离子体处理时间、反应室气压和射频功率等条件的改变而变化。平带电压最小可达 - 0 .5 5～ - 0 .88V ,比同一环境热氧化法制备的SiO2
The SiO 2/Si structure was formed when ploysilane coated on Si substrate was treated by O 2 plasma technique.The flat-band voltage was measured by the conventional MOS capacitance method. The results show that the flat-band voltage was dependent on the conditions of O 2 plasma such as reactant pressure,treatment time,and power. When an optimal treatment condition is selected,it will be up to a minimal value in the range of -0.55 ～-0.88 V,which is less than that of SiO 2/Si structure by thermal oxidation under the same experimental environment.
出处
《半导体光电》
CAS
CSCD
北大核心
2002年第2期122-124,共3页
Semiconductor Optoelectronics
基金
国家自然科学基金资助项目 (2 97710 2 4)
