摘要
运用经典电路理论 ,对MOS功率管的开关特性、驱动原理进行了分析 ,导出了应用MOS功率管实现高速大电流开关应遵从的原则和方法 ,并成功地实现了光脉冲上升时间小于 5ns、下降时间小于 10ns ,驱动电流达 10~ 5 0AP
Analysis is made on switching properties and drive mechanism for MOS power transistor based on classical circuit theory. Principle and technique that should be followed for high speed and high current switching by using MOS power transistor are deduced. The requirement of laser source with pulse rise time<5 ns, fall time<10 ns, and drive current up to 10~50 A p p is successfully fulfilled.
出处
《半导体光电》
CAS
CSCD
北大核心
2002年第3期195-197,共3页
Semiconductor Optoelectronics