摘要
依据等离子刻蚀机设备在CCD研制中所起的关键作用 ,对提高刻蚀多晶硅电极的质量作了一些探讨 。
The improvement of quality for electrode etching on polycrystal silicon is discussed in accordance with the key function of plasma etching machine for fabrication of CCDs. A way to solve related problems is found and the results are given.
出处
《半导体光电》
CAS
CSCD
北大核心
2002年第3期210-211,214,共3页
Semiconductor Optoelectronics
