摘要
介绍了利用LPMOCVD技术在InP衬底上生长In0 .53 Ga0 .4 7As材料 ,获得表面平整、光亮的In0 .53 Ga0 .4 7As外延层。研究了Ⅴ /Ⅲ比对表面形貌、结晶质量、电学质量的影响。在Ⅴ /Ⅲ比较低时 ,表面粗糙 ,要获得镜面状的表面形貌 ,Ⅴ /Ⅲ比必须大于 4 0。Ⅴ /Ⅲ比对外延层结晶质量有影响。迁移率和本征载流子浓度随着Ⅴ /Ⅲ比的增加而增大。
In_ 0.53 Ga_ 0.47 As was grown by low-pressure metalorganic chemical vapor deposition on Fe-doped InP substrate.The mirror-like and featureless morphology of In_ 0.53 Ga_ 0.47 As epilayer was attained.Effect of Ⅴ/Ⅲ ratio on surface morphology,crystal quality and electricity quality of In_ 0.53 Ga_ 0.47 As/InP was investigated. The surface morphology of epilayer becomes rougher when the Ⅴ/Ⅲ ratio is small.To obtain mirror-like surface morphology,the Ⅴ/Ⅲ ratio should be than 40. The Ⅴ/Ⅲ ratio has an effect on crystal quality of epilayer. The mobility and residual carrier concentration will increase as the Ⅴ/Ⅲ ratio increases.
出处
《半导体光电》
CAS
CSCD
北大核心
2002年第4期271-273,共3页
Semiconductor Optoelectronics
基金
国家自然科学基金重点项目 (5 0 132 0 2 0 )
