期刊文献+

用于雷达的高速半导体激光器和探测器

High-speed Semiconductor Lasers and Detectors for Radar Applications
下载PDF
导出
摘要 介绍用于雷达的高速半导体激光器和探测器的特性 ,综述了这类器件的研究进展 ,重点讨论具有高的调制带宽的高速量子阱激光器和具有高的收集效率的高速PIN光电探测器。 This paper describes high-speed semiconductor lasers and detectors for radar applications, as well as their advances. The emphasis is put on high-speed quantum well lasers with wide modulation bandwidth, and high-speed PIN photodetectors with high collection efficiency.
出处 《半导体光电》 CAS CSCD 北大核心 2002年第5期293-298,共6页 Semiconductor Optoelectronics
关键词 高速半导体激光器 高速半导体光探测器 调制带宽 收集效率 雷达 high-speed semiconductor laser high-speed semiconductor detector modulation bandwidth collection efficiency radar
  • 相关文献

参考文献9

  • 1[1]Zmuda H, Toughlian E N. Photonics aspects of modern radar[M]. 1st ed., Norwood, MA: Artech House, 1994.
  • 2[2]Lau K Y, Yariv A. Ultra high speed semiconductor lasers[J]. IEEE J. Quantum Electron., 1985, QE-21: 121-138.
  • 3[3]Lester L F. Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasers[J]. Appl. Phys. Lett., 1991, 59(10): 1162-1164.
  • 4[4]Lipsanen H. High-speed InGaAsP/InP multiple-quantum-well laser[J]. IEEE Photon. Technol. Lett., 1992, 4(7): 673-675.
  • 5[5]Kjebon O. Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs[J]. Proc. SPIE, 1996, 2684: 138-152.
  • 6[6]Morton P A. Ultra-wide bandwidth 1.55μm lasers[J]. Proc. SPIE, 1996, 2684: 128-137.
  • 7[7]Czotscher K. Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions[J]. Proc. SPIE, 1996, 2684: 153-161.
  • 8[8]Bhattacharya P. Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15GHz modulation bandwidth at room temperature[J]. Appl. Phys. Lett., 2002, 80(19): 3482-3484.
  • 9[9]Wentworth R H. Laser mode partition noise in lightwave system using dispersive optical fiber[J]. J. of Lightwave Tech., 1992, 10(1): 84-89.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部