弱光非晶硅太阳电池的研制

Research and Fabrication of Amorphous Silicon Solar Cells under Weak Illumination

讨论了弱光下影响非晶硅太阳电池性能的主要因素 ,指出要提高弱光下太阳电池开路电压主要应提高太阳电池的并联电阻。用辉光放电法顺序沉积 p ,i,n三层非晶硅 ,制作出了弱光非晶硅太阳电池 ,在 2 0 0lx白荧光灯照射下 ,其单位面积最大输出功率达 7.76 μW /cm2 。

The main factors affecting the performance of amorphous silicon solar cells at weak illumination are analyzed in this paper. To increase the open-circuit voltage of amorphous silicon solar cells at weak illumination the shunt resistance of the solar cells must be increased first. p-a-Si, i-a-Si, n-a-Si were deposited on TCO glass by means of glow discharge so that the amorphous silicon solar cells at weak illumination were fabricated. The output of maximum power of 7.76 μW/cm 2 under 200 lx white fluoresent light was obtained.