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生长温度对Si_(1-x)Ge_x∶C合金薄膜性质的影响

Effects of Growth Temperature on Properties of Si_(1-x)Ge_x∶C Alloy Films
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摘要 用化学气相淀积方法在Si(100)衬底上制备Si缓冲层,继而外延生长Ge组分渐变的Si1-xGex∶C合金薄膜。研究表明,较低的Si缓冲层或Si1-xGex∶C外延层生长温度均不利于获得理想的Si1-xGex∶C合金薄膜,仅在Si缓冲层和Si1-xGex∶C外延层的生长温度均为750℃时可以获得质量较高、组分均匀的Si1-xGex∶C合金薄膜。本文通过对材料结构及表面形貌的分析研究了缓冲层和外延层的生长温度对Si1-xGex∶C合金薄膜性质的影响。 Si buffers and then Ge graded Si1-xGex∶Calloy films were deposited on p-Si (100) substrates by chemical vapor deposition (CVD) method.The results showed that the lower growth temperature of Si buffers and/or epitaxial Si1-xGex∶Clayers leads to worse crystal structure and surface morphology of the alloy films.The ideal growth temperature of buffers and alloy films,for Si1-xGex∶C alloy with better quality and more uniform distribution,is 750 ℃.The effects of the growth temperature of buffers and/or epitaxial alloy films on the properties of Si1-xGex∶Calloy films have been discussed by the analysis of epitaxial film structure and surface morphology.
作者 夏冬梅 王荣华 王琦 韩平 谢自力 张荣
机构地区 南京大学物理学系江苏省光电信息功能材料重点实验室
出处 《稀有金属》 EI CAS CSCD 北大核心 2007年第z1期21-24,共4页 Chinese Journal of Rare Metals
基金 国家重点基础研究发展规划基金(2006CB604907) 高等学校博士学科点专项科研基金(20050284004) 2006年度国防科重点实验室基金(9140C1404010605)
关键词 化学气相淀积 Si1-xCex:C合金薄膜 生长温度 CVD Si1-xGex∶Calloyfilms growthtemperature
分类号 TN304.055 [电子电信—物理电子学]
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参考文献8

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二级参考文献12

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