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AlGaN/GaN HFET中的陷阱位置和激活能

Location and Active Energy for Trap in AlGaN/GaN HFET
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摘要 自洽求解薛定谔方程和泊松方程求出了异质结能带和沟道阱基态、激发态及二维表面态的波函数.研究了表面陷阱位置及其激活能.发现表面高密度缺陷减薄了势垒层,显著增强了热电子隧穿过程.从缺陷态发射电子和热电子隧穿构成的新陷阱模型出发,解释了HFET的瞬态电流和产生.复合噪声.最后讨论了改进材料生长和器件工艺来抑制陷阱效应,改善器件性能的途径.
作者 薛舫时
机构地区 南京电子器件研究所
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第z1期418-421,共4页 半导体学报（英文版）
关键词 AlGaN/GaN场效应管 陷阱 二维表面态 表面缺陷 热电子隧穿
分类号 TN386 [电子电信—物理电子学]
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参考文献7

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二级参考文献22

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  • 7Hasegawa H,Inagaki T,Ootomo S,et al.Mechanisms of collapse and gate leakage currents in A1GaN/GaN heterostructure field effect transistors.J Vac Sci Technol,2003,21(4):1844.
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共引文献7

Journal of Semiconductors
2007年 第z1期

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