辐照对SiGe HBT增益的影响
Irradiation Effects on DC Current Gain of SiGe HBT
摘要
比较了电子和γ射线辐照后SiGe HBT和Si BJT直流增益β的变化.在Vbe≤0.5V时,较高剂量辐照时SiGe HBT的放大倍数辐照损伤因子d(β)为负;在Vbe≥0.5V时,SiGe HBT的d(β)远比Si BJT的小.SiGe HBT有更好的抗辐照性能.针对测得的一些电子陷阱对辐照致性能变化的影响进行了讨论.
基金
国家自然科学基金资助项目(批准号:10075029,10375034)
参考文献8
-
1[2]Ohyama H,Vanhellemont J,Takami Y,et al.Proton irradiation effects on the performance of Si1-xGex devices.Phys Status Solidi A,1996,158(1):325
-
2[3]Roldan J M,Ansley W E,Cressler J D,et al.Neutron radiation tolerance of advanced UHV/CVD SiGe HBT BiCMOS technology.IEEE Trans Nucl Sci,1997,44(6):1965
-
3[4]Lin H,Lee S.Super-gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter-thinning design.Appl Phys Lett,1985,47:839
-
4[5]Meng X T,Yang H W,Kang A G,et al.Effects of neutron irradiation on SiGe HBT and Si BJT devices.Mater Sci:Mater in Electron,2003,14(4):199
-
5[6]Lin H,Lee S.Super-gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter-thinning design.Appl Phys Lett,1985,47:839
-
6[8]Summers G P,Burke E A,Shapiro P,et al.Damage correlation in semiconductors exposed to gamma,electron and proton radiatiom.IEEE Trans Nuci Sci,1993,40(6):1372
-
7[9]Roldan J M,Niu G,Ansley W E,et al.Basic mechanisms of radiation effects-an investigation of the spatial location of proton-induced traps in SiGe HBTs.IEEE Trans Nucl Sci,1998,45(6):2424
-
8[10]Zhang S M,Niu G F,Cressler J D,et al.A comparison of the effects of Gamma-irradiation on SiGe HBT and GaAs HBT technologies.IEEE Trans Nucl Sci,2000,47(6):2521
-
1刘键,王佩璇.中子辐照GaAs的X射线漫散射研究[J].材料研究学报,1999,13(1):99-102.
-
2车驰,柳青峰,马晶,周彦平.位移效应对量子点激光器的性能影响[J].物理学报,2013,62(9):269-274. 被引量：2
-
3刘健,王佩璇.中子辐照GaAs快速退火行为的低温光荧光研究[J].发光学报,1998,19(1):50-55. 被引量：2
-
4明军,杨杨,郝其伟.一种与亮度细节相关的图像质量评价方法[J].合肥工业大学学报（自然科学版）,2007,30(7):833-835. 被引量：2
-
5何宝平,刘敏波,王祖军,姚志斌,黄绍艳,盛江坤,肖志刚.部分耗尽SOI晶体管电离辐射损伤的物理模型[J].计算物理,2015,32(2):240-246. 被引量：1
-
6Jong-Woong PARK,Sung-Han SIM,Jin-Hak YI,Hyung-Jo JUNG.Development of temperature-robust damage factor based on sensor fusion for a wind turbine structure[J].Frontiers of Structural and Civil Engineering,2015,9(1):42-47. 被引量：1
-
7宋佳润,徐子强,杨付正.结合网络视频传输特性的参数规划模型[J].西安电子科技大学学报,2016,43(2):168-173. 被引量：2
-
8曾骏哲,何承发,李豫东,郭旗,文林,汪波,玛丽娅,王海娇.电荷耦合器件在质子辐照下的粒子输运仿真与效应分析[J].物理学报,2015,64(11):231-238.
-
9郝秀云,杨道国,秦连城,刘运吉.环氧模塑封材料的热-机械疲劳失效分析[J].电子元件与材料,2005,24(5):49-51. 被引量：2
-
10茅帅帅,诸波,王永强,刘国庆,夏丽,胡芳仁.基于异步幅度抽样的高速光信号色散监测方法[J].红外与激光工程,2014,43(7):2307-2311.
